FET : Short Notes | Important points - Technology Publish

Field effect transistor

Field effect transistor

1. The operation of FET is controlled by electric field intensity produce in the device.

2. It is a voltage controlled device.

3. High input resistance device.

4. In most of the measuring instrument FET is connected on the input side to offer a large input resistance.

5. Unipolar device

6. Majority carrier device

7. No minority career

8. Less noise device when compared to BJT.

9. No leakage current and therefore temperature effect on the device is less or excellent thermal stability.

10. Larger bandwidth

11. Gain bandwidth product is constant 

12. Offset voltage (cut in voltage) is zero

13. Negative power dissipation

Disadvantages

1. Smaller gain
2. Small GBW product

Source-
               It is the source of majority carrier

Drain-
              It Drains of majority carrier

Gate -
              It is the terminal which control the majority carrier moving from source to drain or indirectly control the drain current

FET: Field Effect Transistor
BJT: Bipolar Junction Transistor

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