BJT - Bipolar Junction Transistor
1. It is a current controlled device
2. Low input resistance device
3. Higher power dissipation when compared to FET
4. Bipolar device
5. Current is carried by both majority and minority carrier
6. Noisy device
7. Leakage current it is emitting therefore thermal stability is less
8. Gain is large
9. Gain bandwidth product is constant
10. Emitter is highly doped to inject its majority carrier into the base
11. Base is lightly doped to reduce the recombination in the base region
12. Bases provided with the small area to reduce the transit - time
13. Transit time is the time taken by the charge carrier in moving from emitter to collector
14. Transistor action take place in the base region
15. Collector is moderately doped
16. Emitter provided with medium area
17. The essential requirement of transistor designing is the emitter charge carrier must reach the collector and this is obtained by keeping the conductivity of the base much smaller than conductivity of emitter
18. Emitter is relativity highly doped when compared to base and collector
19. Base is relatively lightly doped when compared to emitter and collector
20. Transistor can work as an excellent amplifier when operated at Forward Active region
21. Transistor can work as a switch when operated at cutoff and saturation region
22. The transistor will be consuming maximum power when operated in active region
hi
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